Xiaoxiang Xia, Yimin Sun, Haifang Yang, Hui Feng, Li Wang, and Changzhi Gu
Citation: Journal of Applied Physics 104, 033505 (2008); doi: 10.1063/1.2961327 View online: http://dx.doi.org/10.1063/1.2961327
View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/104/3?ver=pdfcov Published by the AIP Publishing
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JOURNALOFAPPLIEDPHYSICS104,033505͑2008͒
Theinfluencesofsubstrateandmetalpropertiesonthemagneticresponseofmetamaterialsatterahertzregion
XiaoxiangXia,YiminSun,HaifangYang,HuiFeng,LiWang,andChangzhiGua͒
BeijingNationalLaboratoryforCondensedMatterPhysics,InstituteofPhysics,ChineseAcademyofSciences,Beijing100190,China
͑Received20March2008;accepted25May2008;publishedonline1August2008͒
Themetamaterials͑MMs͒withplanarmetalarraysofsplitringresonatorswerefabricatedonquartzandsiliconsubstrates;theinfluencesofsubstratepermittivityandmetalconductanceonthemagneticresponsesofintheterahertzregionwereinvestigated.Theelectromagnetic͑EM͒responsesofthemetamaterialswerecharacterizedbyterahertztime-domainspectroscopy.Theexperimentalresultrevealsthatthereisa0.39THzredshiftinthetransmissionspectraforthemagneticresponsewhenthesubstratechangesfromquartztosilicon,whichisinconsistencewiththefinite-differencetime-domain͑FDTD͒simulation.Basedonthesimulationandexperimentalresults,andtakingintoaccounttheEMpropertiesofsubstratematerials,amodifiedL-CmodelispresentedtounderstandtheMMsysteminterahertzdomain.©2008AmericanInstituteofPhysics.͓DOI:10.1063/1.2961327͔
I.INTRODUCTION
Themetamaterials͑MMs͒,asartificialmaterials,exhibitanexoticanduniqueelectromagnetic͑EM͒propertythatisnotavailableintheexistingmaterialsinnature.Veselago1predictedthepossibilityofMMswithnegativeindexofre-fractionin1968.However,thefirstMMwasnotdemon-stratedinmicrowave2untiltheoreticalmodels3,4werepro-posedinrecentyears.Sincethen,variousMMshavebeenrealizedinthefrequencybandfromradiotooptical,5–11andtheyhaveshowedgreatpotentialsinapplicationssuchas“perfectlens”12andcloak.13
Generally,MMsareformedbymetalelementarrayssuchassplitringresonators͑SRRs͒orcut-wirepairswithdimensionalscaleinsubwavelength͑/5–/10͒,andareconsideredastheso-calledmagneticatoms.”10Theycanex-hibitastrongmagneticresponseathighfrequencysuchasterahertz͑1THz=1012Hz͒,6infrared,7andopticalfrequency,11wherethepermeabilityisalwaysconsideredtobe1.Forexample,SRRwasdesignedtoproducenegativepermeabilitywhenthemagneticfieldwaspolarizedalongtheringaxis.TheeffectivepermeabilityofaSRRstructure,whichworksinaperpendicularmagneticfieldofelectro-magneticradiation,wasintroducedas
f2
eff=1+2,
0−2−i⌫͑1͒
wherefisthefillingfactorofthematerialand0istheresonantfrequencyarisingfromtheL-Cresonanceofthesystem.Therefore,theeffectivepermeabilitycanbenegativewithafewhertzshiftfromthe0.3
However,athighfrequency,suchasterahertz,themag-neticresponseofSRRisentirelycausedbyapolarizedelec-tricfield,notamagneticfield.Inthiscase,thesplitringcan
a͒
Authortowhomcorrespondenceshouldbeaddressed.Tel.:0086-10-828197.FAX:0086-10-828198.Electronicmail:czgu@aphy.iphy.ac.cn.
beassumedasanL-Coscillator,whereastrongmagneticresponseoftheplanarMMscanbeachievedattheL-Cresonantfrequency.
InthetraditionalL-CmodelofSRRs,metalsaretreatedasperfectconductorsfrommicrowavetomid-IRwave-length,andtheeffectofsubstrateunderneathSRRsontheelectromagneticwavetransmissionpropertiesinthecompos-itematerialsisnormallyignored.Therefore,insuchafre-quencyband,theL-Cresonantfrequencyisconsideredtobeindependentoftheelectromagneticpropertiesofthemetalandthesubstrate.Inotherwords,themagneticresponsefre-quencyofMMsiscompletelydeterminedbythegeometryandsizeofSRRs.14However,theshiftofmicrowavetrans-missionpropertiesoftheMMswithdifferentsubstrateshadbeendemonstratedbycomputersimulationsandexperiments.15Atterahertzfrequency,Padillaetal.16firstdemonstrateddynamicalcontroloftheelectricalresponseofSRRsthroughphotoexcitationoffreecarriersintheGaAssubstrate,andthentheyfabricatedaMMdevicewithChenetal.,17whereaSchottkydiodeformedbytheMMarraysonGaAssubstrateenablesmodulationofterahertztransmissioneffectively.
Inthispaper,asystematicinvestigationabouttheinflu-enceoftheelectromagneticpropertiesofsubstrateandmetalontheMMmagneticresponseinterahertzregionwascarriedout.AseriesofhighqualitySRRMMswerefabricatedusinganimprovedUVphotolithographyandlift-offprocess.ThemagneticresponsesoftheMMswerecharacterizedbytheterahertztime-domainspectroscopy͑TDS͒.Theexperimen-talresultindicatesthatthemagneticresponseinSRRMMsdependsonthepropertiesofbothmetalandsubstratemate-rials.TakingintoaccountthematerialEMproperties,amodifiedL-Cmodelispresented,whichprovidesaneffec-tivemethodtodesignandmodulatetheterahertzMMdevicepropertiesutilizingvarioussubstratesandmetallicmaterials.
©2008AmericanInstituteofPhysics
0021-79/2008/104͑3͒/033505/5/$23.00104,033505-1
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033505-2Xiaetal.J.Appl.Phys.104,033505͑2008͒
FIG.1.͑a͒ThegeometryofSRR.͑b͒AtopviewSEMimageofthegoldenSRRarrayonsiliconsubstrate.
II.EXPERIMENTALDETAILS
FIG.2.ThetransmissionspectrafortheSRRMMswiththedifferentpo-larizationdirectionsofincidentterahertzbeam,theelectricfieldpolarizationdirectionofincidentterahertzbeamisparalleltothegap-bearingsidesofSRRincaseI,andperpendicularincaseII.
Inordertoinvestigatethedependenceofmagneticre-sponseofSRRMMsontheEMpropertiesofsubstrateandmetalmaterials,gold,silver,andchromewerechosentofab-ricatemetalsplitringsonquartz͑thicknessof800m͒andsilicon͑thicknessof500m,resistivityof100⍀cm͒sub-strates.Thegeometries,asshowninFig.1͑a͒,havethefol-lowingdimensionalscale:widthwofmetallinesis3m;gapginthesplitringis5m;sidelengthais31m;periodiclatticeconstantis50mandthemetalthicknesshis75–200nm.
ThesamplesofSRRMMs,showninFig.1͑b͒,werefabricatedusinganimprovedUVphotolithographyandlift-offprocessthathasbeendescribedelsewhere.18Briefly,thewaferscoatedwithS1813/LORbilayerresistswerefirstex-posedusingaKarlSuessMA6UVphotolithographer.TheS1813/LORbilayerresistsformedaperfectundercutprofilethroughcontrollingthedevelopmentconditionscarefully.Thenathinmetalfilmwasdepositedonthesamplesbyusingthethermalevaporationmethod.Finally,alift-offpro-cesswasperformedtoformtheSRRMMsamples.
ThetransmissionspectraofSRRMMswereobtainedbytheterahertzTDS.Theterahertz-TDSsystemandthedetailsofcharacterizationprocedureweredescribedinRef.19.BytestingwhethertheabsorptiondipsdisappearornotwhentheplanarSRRsamplesarerotatedorthogonally,onecancon-firmwhichdipstandsformagneticresponseintransmissionspectra.19,20AsthemeasuredspectraresultsshowninFig.2,fordifferentSRRMMs͑100nmAgSRRonthesiliconandquartzsubstrates͒,absorptiondipsappearedat0.6or1.1THz
whentheelectricfieldpolarizationdirectionofincidenttera-hertzbeamwasparalleltothegap-bearingsidesofSRR͑caseI͒,anddisappearedwhenitwasperpendicular͑caseII͒,whichdemonstratedthattheabsorptiondipsareinducedbythemagneticresponse.Inordertostudytheeffectsofelec-tromagneticpropertiesofmetalandsubstratematerialsonthemagneticresponsefrequencyofSRRMMs,onlythemagneticresponsesintheincidentconditionofcaseIwereconsideredinthepresentinvestigation.III.RESULTSANDDISCUSSIONS
Figure3showsthetransmissionspectrafortheSRRMMswithdifferentsubstratesand/ormetals.Usingtheaforementionedmethod,weconfirmedthatthedipsinthetransmissionspectrumofthequartzsamplenear1.0THzandthedipsofthesiliconsamplenear0.6THzwereinducedbythemagneticresponse,andthedipsinthetransmissionspec-trumofthesiliconsamplenear1.75THzwereinducedbythehalfwaveresonanceduetothesidelengthoftheSRRMMs.For100nmthicknessgoldandsilverSRRsonthequartz,themagneticresponsefrequenciesareboth1.02THz.However,fortheSRRMMswithsamegeometricsizeonthesiliconsubstrate,themagneticresponsefrequencyshiftedto0.63THz.Thereisa0.39THzredshiftforthemagneticresponseinthetransmissionspectrawhenthesubstratechangesfromthequartztothesilicon,whichdemonstratestheinfluenceofsubstratematerialsonthemagneticresponseofSRRMMs.
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033505-3Xiaetal.J.Appl.Phys.104,033505͑2008͒
directlydependentonthesubstratepermittivitysub.Ifweassumethatthepermittivityisaconstant,therewillbealargerdisplacementcurrentinthesubstratewithhighersubatthesameincidenceconditions.ThuswecanassumeRsub=b/approximatively,andherebisaconstantandpolar-izability=sub−1.Withotherfrequencydependenceofcir-cuitelementsignored,resonantfrequency0canbeex-pressedas
0=
ͱ
Cb2
=
LC2b2+L2
ͱ
1
,
LC+c2
͑3͒
FIG.3.ThetransmissionspectrafortheSRRMMswithdifferentsubstratesand/ormetals.
Generally,unlessthesubstratethicknessisontheorderof͑ormuchthinnerthan͒theresonancewavelength,theef-fectofsubstratethicknessonmagneticresponsecanbeig-nored.Takingthesubstratecontributionintoconsideration,weassumethataleakageresistanceRsubexistsinthesurfaceofdielectricsubstratebetweentheendsofSRRarms.Theleakageresistanceisnotserieswoundwiththecapacitance,butshuntwound,andtheSRRstructureinourworkcanbetreatedasanL-CoscillatorasshowninFig.4.Theresis-tanceRlpresentsthelossesinthemetal,RdielstandsforthelossesinthedielectricbetweentheendsofSRR,ListheinductanceofmetallinesandCisthecapacitancebetweentheendsofSRR.Generally,ifthedielectricmediumbetweenthecapacitanceisair,theresistanceRdielcanbeignoredcompletelyinhighfrequency.Sothecompleximpedancecanbeexpressedas
Z=Rl+iL+
11
+iCRsub
2CRsub2
1+C2Rsub2
=Rl+
Rsub
2
1+C2Rsub2
+iL−
ͩͪ.͑2͒
TheleakageresistanceRsubherestandsfortheresistanceto
thedisplacementcurrentinaninsulatingsubstrate,whichis
FIG.4.AmodifiedL-Cresonancemodelconsideringthesubstratecontribution.
L
wherec=Cb2.
FromEqs.͑2͒and͑3͒,wecanconcludethatthesurfaceconductivityofsubstrateplaysanimportantroleintheSRRmagneticresponse,andthesurfaceresistanceisdependentonthesubstratepermittivitysub.Theincreaseinsubstratepermittivitycancausearedshiftinthetransmissionspectra,whichhasbeendemonstratedintheaboveexperimentsandwillbediscussedlaterindetailswiththesimulationresults.
AsseeninFig.3,themagneticresponsefrequenciesarealmostunchangedfortheAuandAgstructuresonthesamesubstrate.However,forthesamethickness,scale,andgeom-etry,theCrSRRMMsshowacompletelydifferenttransmis-sionpropertiescomparedwiththesilverorgoldinthesamecondition.Noabsorptiondipoccursinthetransmissionspec-traofCrSRRMMswithinourmeasurementrange.ItisobviousthatbothAuandAgaregoodconductors,andtheirconductivitiesareaboutanorderofmagnitudehigherthanthatofchromium.Inaddition,chromiumgenerallyexperi-encesstresscracksinthickfilmdepositions,whichmayalsodecreaseitsconductivity.Asitisknown,theinductanceLofSRRalsodependsonthepropertiesofmetallicmaterialsapartfromitsgeometryandsize.AccordingtoEq.͑3͒,thechangeininductanceLofmetalwillinfluencethemagneticresponseinthetransmissionspectrum.
Theinfluenceofmetalthicknessonthemagneticre-sponseofSRRMMswasalsoinvestigated.Figure5showsthetransmissionspectraof75to200nmthicknesssilverSRRMMsonthequartzandsilicon.Apparently,thedepthofdipsvarieswiththedecreaseinfilmthickness.Theshiftofmagneticresonancefrequency,however,isnotobviouswhilethethicknessofmetalfilmvariesfrom75to200nm.
Inordertochecktheeffectsofdielectricpropertiesofsubstratesonthetransmissionspectra,finite-differencetime-domain͑FDTD͒simulationsofterahertzEMpropagationinSRRMMsonthequartzandsiliconsubstratesandinvacuumwereperformed.Thepermittivitiesofquartzandsiliconinthesimulationareassumedtobe3.84and12.25interahertzregion,respectively,whichareobtainedfromthemeasuredopticalparametersinterahertz-TDS.AllscaleandgeometricparametersofSRRareconsistentwiththeexperi-mentalcondition.Itwasalsoassumedthatthesurfaceleak-ageresistanceRsubisindependentofthethicknessofsub-stratelayerwhenthethicknessofthesubstratefarlargerthantheresonantwavelength.Forthesimplificationofsimula-tion,thesubstratewasassumedasa500nmthinlayerforbothquartzandsilicon.Additionally,becauseoftheweakdependenceofthespectralresponseonthethicknessof
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FIG.7.ThedependenceofpolarizabilityonmagneticresponsefrequencyfromFDTDsimulation,modifiedL-Cresponsemodel,andexperimentaldata.
FIG.5.ThetransmissionspectraforthesilverSRRMMswithdifferentthicknesseson͑a͒quartzand͑b͒siliconsubstrates.
metalstructures,themetalfilmthicknesswasassumedas1mandthemetalmaterialasaperfectconductor.
Figure6showsthesimulationtransmissionspectraofa1mperfectmetalSRRMMson500nmthicknessquartzandsiliconsubstrates͑allpolarizationdirectionsincaseI͒.Themagneticresponsegapisabout0.59THzforsiliconand0.97THzforquartz,respectively.Thevariationofsubstratematerialscausesa0.38THzmagneticresponsefrequencyshiftinthetransmissionspectra.Consideringtherewereprobabledeviationsintheconditionsbetweentheexperi-mentalmeasurementsandthesimulations,thesimulationre-sultsareinarathergoodagreementwiththeexperimentalresultsofthegoodconductors͑AuandAg͒.Furthermore,the
simulationoffreestandingSRRMMsinvacuumwascarriedoutandthemagneticdipwasfoundaround1.46THz,whichishigherthantheresonantfrequenciesofSRRMMswithsubstrate.
TheFDTDsimulationsofSRRMMswerealsocarriedoutonhypotheticsubstratewithpermittivitiesof1,2.25,4,6.25,9,12.25,and16,andcorrespondingmagneticresponsefrequencieswereobtained.AccordingtoEq.͑3͒,wecanob-tainL−C=0.46606fromthesimulationresultoffreestand-ingSRRMMsinvacuum,andassumetheconstantc=0.035bydatafitting.Agroupoffitteddataaboutthepo-larizabilitydependenceonmagneticresponsefrequencywasobtainedaccordingtothemodifiedL-Cresponsemodel.InFig.7,thedependencesofpolarizabilityonmagneticre-sponsefrequency0obtainedfromFDTDsimulation,modi-fiedL-Cresponsemodel,andexperimentaldata,weredrawntogetherandcompared.OnecanfindfromFig.7thatthemodifiedL-Cresponsemodelshowsatrendsimilartothesimulationandexperimentalresults.Consideringthatthefre-quencydependenceofothercircuitelementshavebeenig-nored,thedeviationbetweenFDTDsimulationandmodifiedL-Cmodelisacceptable,implyingthatthemodifiedL-CresponsemodelcansatisfactorilydescribeandexplainthedependenceofthemagneticresponseofSRRMMsonthesubstrates.IV.CONCLUSION
FIG.6.FDTDsimulationtransmissionspectraofSRRMMsonquartz,siliconsubstrates,andwithoutsubstrate.
AseriesofSRRMMsusingdifferentmetals͑Au,Ag,andCr͒onsiliconandquartzsubstrateswerefabricated,theeffectoftheelectromagneticpropertiesofmetalandsub-stratematerialsonthemagneticresponsesofSRRMMsinterahertzregionwereinvestigatedonexperimentandsimu-lation.A0.39THzshiftofmagneticresponsedipsintrans-missionspectrawasobservedwhenthesubstratewaschangedfromquartztosilicon.Themagneticresponsedipsdisappearedinthemeasurementfrequencyrangewhenchro-miumwasusedinplaceofthegoodconductors͑silverorgold͒.TakingintoconsiderationofthepropertiesofthemetalandsubstratematerialsinSRRMMs,amodifiedL-C
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033505-5Xiaetal.
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ACKNOWLEDGMENTS
ThisworkwassupportedbytheNationalNaturalSci-enceFoundationofChina͑GrantNos.60501014and10390160͒andtheNationalCenterforNanoscienceandTechnology,China.
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