JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
FEATURES z Extremely Fast Switching Speed
z Low Forward Voltage
MARKING: L9
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
SOD-323 Plastic-Encapsulate Diodes SOD-323 BAT54WS Schottky Barrier Diode
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage
Average Rectified Output Current
Symbol
Limit
Unit
VRM 30 V VR IO
21 100
V mA
Forward Continuous Current IF 200 mA Repetitive Peak Forward Current IFRM 300 mA Non-repetitive Peak Forward Surge Current
@t=8.3ms Power Dissipation
Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range
IFSM 600 mA
PD
200
mW
RθJA 500 ℃/W
TJ 125 ℃ TSTG -55~+150 ℃
Electrical Characteristics @Ta=25℃
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
IR=100μA 30 IF=0.1mA
Reverse breakdown voltage V (BR)
VF1
V
240
mV mV mV mV mV uA ns pF
320 VF2 =IF1.0mA Forward voltage
VF3 =IF10mA 400 VF4 =IF30mA 500 VF5 =IF100mA 1000
2.0 =VR25V IF=10mA, IR=10mA to 1mA , RL=100Ω
VR=1V,f=1MHz
5.0 10
Reverse current Reverse recovery time
IR trr CT
Capacitance between terminals
www.cj-elec.com 1 E,Mar,2015
Typical Characteristics
200100Forward CharacteristicsPulsed100
PulsedReverse CharacteristicsFORWARD CURRENT IF (mA)REVERSE CURRENT IR (uA)T=a25℃10Ta=100℃10
Ta=100℃1
10.1
Ta=25℃0.102004006008000.01
051015202530FORWARD VOLTAGE VF (mV)REVERSE VOLTAGE VR (V)
20Capacitance Characteristics
Ta=25℃250
Power Derating Curve
CAPACITANCE BETWEEN TERMINALSCT (pF)16POWER DISSIPATION PD (mW)20f=1MHz200
12150
8100
450
00510
150
0255075100125
REVERSE VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta (℃)
www.cj-elec.com 2 E,Mar,2015
SOD-323 Package Outline Dimensions
SOD-323Suggested Pad Layout
www.cj-elec.com3 E,Mar,2015SOD-323 Tape and Reel
www.cj-elec.com4 E,Mar,2015
