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专利名称：PROCESS FOR PREPARING A SILICON MELT
FROM A POLYSILICON CHARGE
发明人：HOLDER, John, D.申请号：EP952124.0申请日：19981007公开号：EP1025288A1公开日：20000809
摘要：A process for preparing a silicon melt from a polysilicon charge, for use in theproduction of single crystal silicon ingots by the Czochralski method, in a crucible whichhas a bottom, a sidewall formation, a centerline which is substantially parallel to thesidewall formation and which intersects a geometric centerpoint of the bottom, and aradius extending from the centerline to the sidewall formation. In the process, thecrucible is loaded with chunk polysilicon to form a charge having a bowl-like shape,wherein initially the load generally slopes radially upwardly and outwardly from thecenterline toward the sidewall formation to an apex and then slopes generallydownwardly and outwardly from the apex to the sidewall formation. The bowl-shapedchunk polysilicon charge is heated to form a partially melted charge, and granularpolysilicon is fed onto the partially melted charge to form a mixed charge of chunk andgranular polysilicon. As the mixed charge is further heated to form a silicon melt, theunmelted chunk polysilicon present above the melt surface acts to deflect any moltensilicon that may be splattered as granular polysilicon rapidly melts and hydrogen isreleased.
申请人：MEMC Electronic Materials, Inc.
地址：501 Pearl Drive (O'Fallon)P.O. Box 8 St. Peters, Missouri 63376 US
国籍：US
代理机构：Eyles, Christopher Thomas
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