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专利名称：Methods of forming a plurality of capacitors发明人：Brett W. Busch,Fred D. Fishburn,James
Rominger
申请号：US109231申请日：20040827
公开号：US20060051918A1公开日：20060309
专利附图：
摘要：A plurality of capacitor electrode openings is formed within capacitorelectrode-forming material. A first set of the openings is formed to a depth which isgreater within the capacitor electrode-forming material than is a second set of the
openings. Conductive first capacitor electrode material is formed therein. A sacrificialretaining structure is formed elevationally over both the first capacitor electrodematerial and the capacitor electrode-forming material, leaving some of the capacitorelectrode-forming material exposed. With the retaining structure in place, at least someof the capacitor electrode-forming material is etched from the substrate effective toexpose outer sidewall surfaces of the first capacitor electrode material. Then, thesacrificial retaining structure is removed from the substrate, and then capacitor dielectricmaterial and conductive second capacitor electrode material are formed over the outersidewall surfaces of the first capacitor electrode material formed within the first andsecond sets of capacitor openings.
申请人：Brett W. Busch,Fred D. Fishburn,James Rominger
地址：Boise ID US,Boise ID US,Boise ID US
国籍：US,US,US
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