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专利名称：CMOS CIRCUIT
发明人：CRAFTS, Harold, Springer,HAM, Patrick, Lee申请号：EP86902965.0申请日：19860411公开号：EP0218710A1公开日：19870422
摘要： A complementary MOS inverter circuit comprises an input n-channel transistor(T20) formed in a p-well (70) in a n-type substrate. A load transistor (T10) couples asupply voltage (Vdd) to the drain electrode of the input transistor (T20). An input signal isapplied to the p well (70), so that when the input signal changes from 0 volt to a negativevoltage, the threshold voltage of the input transistor (T20) increases due to thepolarization effect of the bottom door, thus causing the switching off of the inputtransistor (T20) and the variation of the output voltage of 0 volts to a positive value. Thebias voltage applied to the gate of the input transistor (T20) is derivable from a biascircuit comprising a p-channel transistor (T30) operating as a current source and a n-channel transistor (T40) connected as a diode. In a modified arrangement, the inputtransistor (T20) is formed a p-channel device in an n-well. Also described is a differentialamplifier circuit.
申请人：NCR CORPORATION
地址：World Headquarters Dayton, Ohio 45479 US
国籍：US
代理机构：Robinson, Robert George
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