专利内容由知识产权出版社提供
专利名称：Single longitudinal mode semiconductor
laser
发明人：Mito, Ikuo申请号：EP84105167申请日：19840508公开号：EP0125608A3公开日：19860820
专利附图：
摘要：The semiconductor laser diode comprises a distributed Bragg reflector formedon a substrate. The reflector includes an optical waveguide sandwiched between first andsecond cladding regions formed over the substrate. The optical waveguide has a
corrugated region extending within the optical waveguide in a direction parallel to thesurface of the substrate. The thickness of the corrugated region varies in a prescribedperiod and the refractive index of the corrugated region differs from that of the opticalwaveguide. An optically active layer formed over the substrate is butt-jointed to theoptical waveguide, and emits light beams when a current is injected into it. This singlelongitudinal mode semiconductor laser has high performance features. Its equivalentreflecting power is increased by so structuring the grating section that it is highlyefficient in coupling the periodic structure and light.
申请人：NEC CORPORATION
更多信息请下载全文后查看
