专利内容由知识产权出版社提供
专利名称：MEMS pressure sensor with thermal
compensation
发明人：Xianming Zhang,Guangcai Fu申请号：US14711766申请日：20150513公开号：US09751750B2公开日：20170905
专利附图：
摘要：A semiconductor device having a capacitive pressure sensor structure includes asubstrate, an interlayer dielectric layer on the substrate, a bottom electrode of apressure sensor within the interlayer dielectric layer, a pressure sensing cavity above the
bottom electrode, a sensing film above the pressure sensing cavity and covering aportion of the interlayer dielectric layer, a cover layer on the interlayer dielectric layerand on the sensing film, the cover layer having an opening exposing a portion of thesensing film, and a high thermal expansion coefficient material layer disposed on coverlayer and sidewalls of the opening. Through the use of the high thermal expansioncoefficient material layer, the capacitive pressure sensor structure is not susceptible tochanges in ambient temperature to enhance the sensitivity of the capacitive pressuresensor structure.
申请人：Semiconductor Manufacturing International (Shanghai) Corporation
地址：Shanghai CN
国籍：CN
代理机构：Kilpatrick Townsend and Stockton LLP
更多信息请下载全文后查看
