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专利名称：IMAGING APPARATUS, IMAGING SYSTEM
AND MANUFACTURING METHOD OFIMAGING APPARATUS
发明人：Mahito Shinohara,Hideomi Kumano申请号：US14578117申请日：20141219
公开号：US20150179698A1公开日：20150625
专利附图：
摘要：A junction type field effect transistor (JFET) in a substrate includes channel andsource regions of a first conductivity type and first through fourth gate regions of a
second conductivity type. The first and second gate regions are disposed in a directionalong a surface of the substrate. The third and fourth gate regions are disposed in thedirection. The first and third gate regions are disposed in a depth direction. The first gateregion is disposed between the surface and the third gate region. The second and fourthgate regions are disposed in the depth direction. The second gate region is disposedbetween the surface and the fourth gate region. The channel region includes a firstregion disposed between the first and third gate regions and a second region disposedbetween the second and fourth gate regions. The source region is disposed between thefirst and second gate regions.
申请人：CANON KABUSHIKI KAISHA
地址：Tokyo JP
国籍：JP
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