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专利名称：Low temperature ALD SiO2发明人：Mahajani, Maitreyee,Huang, Yi-Chiau,McDougall, Brendan
申请号：EP07021810.2申请日：20071109公开号：EP1925691A1公开日：20080528
专利附图：
摘要：The present invention comprises a silicon dioxide atomic layer depositionmethod. By providing pyridine as a catalyst, water may be utilized as the oxidizationsource while depositing at a low temperature. Prior to exposing the substrate to the
water, the substrate may be exposed to a pyridine soak process. Additionally, the watermay be co-flowed to the chamber with the pyridine through separate conduits to reduceinteraction prior to entering the chamber. Alternatively, the pyridine may be co-flowedwith a silicon precursor that does not react with pyridine.
申请人：Applied Materials, Inc.
地址：3050 Bowers Avenue Santa Clara, CA 95054 US
国籍：US
代理机构：Zimmermann, Gerd Heinrich
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