专利内容由知识产权出版社提供
专利名称：MULTI-CHIP SEMICONDUCTOR DEVICE
WITH HIGH WITHSTAND VOLTAGE, AND AFABRICATION METHOD OF THE SAME
发明人：Hiroshi Fujito,Yasuhiro Takamori申请号：US12133715申请日：20080605
公开号：US20080246534A1公开日：20081009
专利附图：
摘要：A multi-chip semiconductor device includes a substrate, a first semiconductorchip, a second semiconductor chip, and a plastic mold. The first semiconductor chip has a
function for executing a predetermined electrical operation and is installed on thesubstrate. The second semiconductor chip is installed on the first semiconductor chip andis configured to integrate a power circuit to receive an external power supply and tosupply an electric power to the first semiconductor chip based on the external powersupply. The plastic mold seals together the first and second semiconductor chips on thesubstrate.
申请人：Hiroshi Fujito,Yasuhiro Takamori
地址：Suita-shi JP,Nishinomiya-shi JP
国籍：JP,JP
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