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专利名称：Method and apparatus to separate field and
grid parameters on first level wafers
发明人：Edward W. Conrad,Paul D. Sonntag申请号：US10711222申请日：20040902公开号：US07171319B2公开日：20070130
专利附图：
摘要：Disclosed are a method and system for calibrating grid parameters for aphotolithographic tool. One embodiment of the invention utilizes at least two artifactslocated on the wafer stage. The artifacts are located outside of the area where a
substrate would be placed. Typically, four artifacts are used, with two artifacts locatedalong the same axis. The stage moves a first artifact to the alignment system and thesystem measures the location of the first artifact. The stage then moves the secondartifact, which is on the same axis but on the other side of the wafer stage, under thealignment system and measures the location of the second artifact. This is repeated forthe other two artifacts that line up in a second axis (i.e., perpendicular to the first axis).Grid offsets are calculated to provide, for example, grid magnification and rotationcalibrations.
申请人：Edward W. Conrad,Paul D. Sonntag
地址：Jeffersonville VT US,JJeffersonville VT US
国籍：US,US
代理机构：Scully, Scott, Murphy & Presser, P.C.
代理人：Anthony J. Canale
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