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专利名称：Methods for fabricating integrated circuits
using directed self-assembly chemoepitaxy
发明人：Ji Xu,Gerard Schmid,Richard A. Farrell申请号：US14692359申请日：20150421公开号：US09613807B2公开日：20170404
专利附图：
摘要：Methods for directed self-assembly (DSA) using chemoepitaxy in the design andfabrication of integrated circuits are disclosed herein. An exemplary method includesforming an A or B-block attracting layer over a base semiconductor layer, forming a
trench in the A or B-block attracting layer to expose a portion of the base semiconductorlayer, and forming a neutral brush or mat or SAMs layer coating within the trench andover the base semiconductor layer. The method further includes forming a block
copolymer layer over the neutral layer coating and over the A or B-block attracting layerand annealing the block copolymer layer to form a plurality of vertically-oriented,cylindrical structures within the block copolymer layer.
申请人：GLOBALFOUNDRIES, Inc.
地址：Grand Cayman KY
国籍：KY
代理机构：Lorenz & Kopf, LLP
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