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专利名称：Methods for rinsing microelectronic
substrates utilizing cool rinse fluid within agas enviroment including a dryingenhancement substance
发明人：Tracy A. Gast申请号：US11096935申请日：20050401公开号：US08070884B2公开日：20111206
专利附图：
摘要：Rinsing and drying a surface of a microelectronic device and the enhanced
removal of rinse fluid from the surface of the microelectronic device while themicroelectronic device is rotated is provided as part of a spray processing operation.Rinse fluid is generally directed to the surface of the microelectronic device by adispensing device while one or more such microelectronic devices are supported on aturntable in a generally horizontal fashion. Drying gas is supplied after the rinsing step.During at least a portion of both rinsing and drying steps, a drying enhancement
substance, such as IPA, is delivered to enhance the rinsing and drying. Particle counts andevaporation thicknesses are reduced by delivering a tensioactive compound like IPA,during at least portions of the rinsing and drying steps while a microelectronic device iscontrollably rotated. The tensioactive compound is preferably delivered into theprocessing chamber during rinsing and drying and rinse fluid, preferably DI water, ispreferably dispensed to the microelectronic device surface at a temperature below thedew point of the tensioactive compound. Moreover, the rotational speeds of themicroelectronic device during drying and the tensioactive compound delivery
concentration, timing and duration are preferably optimized to achieve further reducedparticle counts and evaporation thicknesses.
申请人：Tracy A. Gast
地址：Waconia MN US
国籍：US
代理机构：Kagan Binder, PLLC
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