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BC 807, BC 808PNP Silicon AF Transistors• For general AF applications• High collector current• High current gain
• Low collector-emitter saturation voltage• Comlementary types: BC 817, BC 818 (NPN)
321VPS05161TypeBC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40Maximum RatingsParameter
Marking5As 5Bs 5Cs 5Es 5Fs 5Gs
1 = B 1 = B 1 = B 1 = B 1 = B 1 = B
Pin Configuration
2 = E 2 = E 2 = E 2 = E 2 = E 2 = E
3 = C 3 = C 3 = C 3 = C 3 = C 3 = C
PackageSOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
SymbolVCEOVCBOVEBOBC 80745505
5001100200330150
BC 80825305
UnitV
Collector-emitter voltageCollector-base voltageEmitter-base voltage
DC collector currentPeak collector currentBase currentPeak base current
Total power dissipation, TS = 79 °CJunction temperatureStorage temperature
ICICMIBIBMPtotTjTstgmAAmAmW°C
-65 ... 150
Thermal ResistanceJunction ambient 1)Junction - soldering point
RthJARthJS
≤285≤215
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
1Sep-27-1999
元器件交易网www.cecb2b.com
BC 807, BC 808Electrical Characteristics at TA = 25°C, unless otherwise specified.ParameterSymbolValues
min.
DC Characteristics
Collector-emitter breakdown voltage IC = 10 mA, IB = 0
Collector-base breakdown voltage IC = 10 µA, IB = 0
Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °CEmitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V
hFE-grp. 16hFE-grp. 25hFE-grp. 40
DC current gain 1) IC = 300 mA, VCE = 1 V
hFE-grp. 16hFE-grp. 25hFE-grp. 40
Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA
VBEsat
--1.2
V
VCEsathFEhFE
100160250 60100170- 160250350 ---- 250400630 ---0.7
V-IEBO
--100
nA
ICBO
--50
µA
ICBO
--100
nA
BC 807BC 808 BC 807BC 808
V(BR)EBOV(BR)CBOV(BR)CEO
4525 50305
-- --- -- ---V
typ.
max.
Unit
1) Pulse test: t ≤ 300µs, D = 2%
2Sep-27-1999
元器件交易网www.cecb2b.com
BC 807, BC 808Electrical Characteristics at TA = 25°C, unless otherwise specified.Parameter
AC CharacteristicsTransition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHzCollector-base capacitance VCB = 10 V, f = 1 MHzEmitter-base capacitance VEB = 0.5 V, f = 1 MHz
Ceb
-60
-Ccb
-10
-pF
fT
-200
-MHz
Symbol
min.
Valuestyp.
max.
Unit
3Sep-27-1999
元器件交易网www.cecb2b.com
Total power dissipation Ptot = f (TA*;TS)* Package mounted on epoxy
400EHP00209PmWtot300TATS2001000050100˚C150TA;TSPermissible pulse loadPtotmax / PtotDC = f (tp)
103EHP00212PtotmaxtPptotDCD=tpTT102D=050.0050.010.020.050.10.21010.5510010-610-510-410-310-2s100tpBC 807, BC 808Transition frequency fT = f (IC)VCE = 5V
103EHP00210fMHzT51025101100101102mA103ΙCCollector cutoff current ICBO = f(TA)VCBO = 25V
105EHP00213ΙnACBO104max103102typ101100050100˚C150TA4Sep-27-1999
元器件交易网www.cecb2b.com
Base-emitter saturation voltageIC = f(VBEsat), hFE = 10
103EHP00214ΙmAC15025˚˚C102-50˚CC51015100510-101.02.03.0V4.0VBEsatDC current gain hFE = f(IC)VCE = 1V
103EHP00216hFE5100˚C25˚C-50˚C1025101510010-1100101102mA103ΙCBC 807, BC 808Collector-emitter saturation voltageIC = f (VCEsat), hFE = 10
103EHP00215ΙmAC15025˚˚C102-50˚CC51015100510-100.20.40.6V0.8VCEsat5Sep-27-1999
