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专利名称：METHOD OF FORMING STRAINED SILICON
ON INSULATOR (SSOI) AND STRUCTURESFORMED THEREBY
发明人：RIM, Kern c/o IBM United Kingdom
Ltd.,Int.Prop.Law
申请号：EP02723555.5申请日：20020321公开号：EP1410428A1公开日：20040421
摘要：A SOI structure and a method for its fabrication, in which a strained silicon layerlies directly on an insulator layer, contrary to the prior requirement for strained-Si layersto lie directly on a strain-inducing (e.g., SiGe) layer. The method generally entails theforming a silicon layer on a strain-inducing layer so as to form a multilayer structure, inwhich the strain-inducing layer has a different lattice constant than silicon so that thesilicon layer is strained as a result of the lattice mismatch with the strain-inducing layer.The multilayer structure is then bonded to a substrate so that an insulating layer isbetween the strained silicon layer and the substrate, and so that the strained silicon layerdirectly contacts the insulating layer. The strain-inducing layer is then removed to exposea surface of the strained silicon layer and yield a strained silicon-on-insulator structurethat comprises the substrate, the insulating layer on the substrate, and the strainedsilicon layer on the insulating layer. As a result, the method yields a strained silicon-on-insulator (SSOI) structure in which the strain in the silicon layer is maintained by the SOIstructure.
申请人：International Business Machines Corporation
地址：Old Orchard Road Armonk, NY 10504 US
国籍：US
代理机构：Williams, Julian David
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